AP20G03BDF

30V N+P-Channel Enhancement Mode MOSFET

AP20G03BDF REV1.0

永源微電子科技有限公司

N-Electrical Characteristics (TJ=25

℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250µA

30

-

-

V

lGSS

Gate-body Leakage current

VDS=0V, VGS=±12V

-

-

±100

nA

IDSS

Zero Gate Voltage Drain Current

VDS=30V, VGS=0V

-

-

1

μA

VGS(th)

Gate-Threshold Voltage

VDS=VGS, ID=250µA

0.5

0.75

1.2

V

RDS(on)

Drain-Source on-Resistance4

VGS=10V, ID=4A

-

7.5

10

mΩ

VGS=4.5V, ID=3A

-

8.5

12

VGS=2.5V, ID=3A

-

11

22

Ciss

Input Capacitance

VDS=15V, VGS=0V,

f=1.0MHz

-

1850

-

pF

Coss

Output Capacitance

-

150

-

Crss

Reverse Transfer Capacitance

-

124

-

Rg

Gate Resistance

f=1MHz

-

3.2

-

Ω

Qg

Total Gate Charge

VGS=4.5V, VDS=15V,

ID=10A

-

10

-

nC

Qgs

Gate-Source Charge

-

3.5

-

Qgd

Gate-Drain Charge

-

2.2

-

td(on)

Turn-on Delay Time

VGS=4.5V, VDD = 15V,

ID=10A, RG = 3Ω

-

8

-

ns

tr

Rise Time

-

28

-

td(off)

Turn-off Delay Time

-

15

-

tf

Fall Time

-

7

-

VSD

Diode Forward Voltage4

IS=1A, VGS = 0V

-

-

1.2

V

IS

Continuous Source Current TA=25°C

12.5

A

Note :

1

、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3

、The power dissipation is limited by 150℃ junction temperature

4

、The EAS data shows Max. rating . The test condition is VDD=18V,RG=25Ω VGS=4.5V,L=0.1mH,IAS=11A

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.