AP4N10AI

100V N-Channel Enhancement Mode MOSFET

AP4N10AI REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250µA

100

111

-

V

IGSS

Gate Leakage Current

VGS = ±20V, VDS = 0V

-

-

±100

nA

IDSS

Drain Cut-off Current

VDS = 100V, VGS = 0V

-

-

1

µA

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 250µA

1.2

1.9

2.5

V

RDS(on)

Drain-Source on-state Resistance3

VGS = 10V, ID = 2A

-

175

220

mΩ

VGS = 4.5V, ID = 1.5A

-

220

280

Ciss

Input Capacitance

VGS = 0V, VDS = 50V, f =

1MHz

-

440

-

pF

Coss

Output Capacitance

-

14

-

pF

Crss

Reverse Transfer Capacitance

-

10

-

pF

Qg

Total gate charge

VGS = 10V, VDS = 50V, ID =

2A

-

5.3

-

nC

Qgs

Gate-source charge

-

1.4

-

nC

Qgd

Gate-drain charge

-

1.8

-

nC

td(on)

Turn-on Time

VGS = 10V, VDD = 50V, RG =

1Ω, ID = 2A

-

14

-

ns

tf

Rise time

-

54

-

ns

td(off)

Turn-off Time

-

18

-

ns

tf

Fall time

-

11

-

ns

VSD

Body Diode Voltage3

IS= 1A, VGS = 0V

-

-

1.2

V

IS

Continuous Source Current

-

-

2

A

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.