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AP4N10AI Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP4N10AI
Descripción Electrónicos  100V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP4N10AI Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP4N10AI
100V N-Channel Enhancement Mode MOSFET
AP4N10AI REV1.0
永源微電子科技有限公司
Description
The AP4N10AI uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 100V ID =4.0A
RDS(ON) < 220mΩ @ VGS=10V (Type：175mΩ)
Application
LED
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP4N10AI
SOT23L
AP4N10AI
3000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
4.0
A
ID@TA=100℃
Continuous Drain Current, VGS @ 10V1
2.5
A
IDM
Pulsed Drain Current2
16
A
PD@TA=25℃
Total Power Dissipation3
3.75
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-ambient 1
125
℃/W
RθJC
Thermal Resistance Junction-Case1
30
℃/W


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