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CSD18534KCS.B Datasheet(PDF) 5 Page - Texas Instruments

No. de pieza CSD18534KCS.B
Descripción Electrónicos  CSD18534KCS 60V N-Channel NexFET™ Power MOSFET
PDF  14 Pages
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Fabricante Electrónico  TI2 [Texas Instruments]
Página de inicio  https://www.ti.com
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CSD18534KCS.B Datasheet(HTML) 5 Page - Texas Instruments

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Qg - Gate Charge (nC)
ID = 40A
VDS = 30V
G001
Figure 4-4. Gate Charge
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10000
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VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
Figure 4-5. Capacitance
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
−75 −50 −25
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TC - Case Temperature (ºC)
ID = 250uA
G001
Figure 4-6. Threshold Voltage vs Temperature
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VGS - Gate-to- Source Voltage (V)
TC = 25°C Id = 40A
TC = 125ºC Id = 40A
G001
Figure 4-7. On-State Resistance vs Gate-to-Source
Voltage
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
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2.2
2.4
−75 −50 −25
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TC - Case Temperature (ºC)
VGS = 4.5V
VGS = 10V
ID =40A
G001
Figure 4-8. Normalized On-State Resistance vs
Temperature
0.0001
0.001
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VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
Figure 4-9. Typical Diode Forward Voltage
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CSD18534KCS
SLPS383C – SEPTEMBER 2012 – REVISED MARCH 2024
Copyright © 2024 Texas Instruments Incorporated
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