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CSD18534KCS.B Datasheet(PDF) 3 Page - Texas Instruments |
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CSD18534KCS.B Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 14 page  4 Specifications 4.1 Electrical Characteristics TA = 25°C unless otherwise stated PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0V, ID = 250μA 60 V IDSS Drain-to-Source Leakage Current VGS = 0V, VDS = 48V 1 μA IGSS Gate-to-Source Leakage Current VDS = 0V, VGS = 20V 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250μA 1.5 1.9 2.3 V RDS(on) Drain-to-Source On-Resistance VGS = 4.5V, ID = 40A 10.2 13.3 mΩ VGS = 10V, ID = 40A 7.6 9.5 mΩ gƒs Transconductance VDS = 30V, ID = 40A 100 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0V, VDS = 30V, f = 1MHz 1500 1880 pF Coss Output Capacitance 164 205 pF Crss Reverse Transfer Capacitance 5.0 6.5 pF RG Series Gate Resistance 1.5 3.0 Ω Qg Gate Charge Total (4.5V) VDS = 30V, ID = 40A 9.3 12 nC Qg Gate Charge Total (10V) 19 24 nC Qgd Gate Charge Gate-to-Drain 3.1 nC Qgs Gate Charge Gate-to-Source 4.8 nC Qg(th) Gate Charge at Vth 3.3 nC Qoss Output Charge VDS = 30V, VGS = 0V 18 nC td(on) Turn On Delay Time VDS = 30V, VGS = 10V, IDS = 40A, RG = 0Ω 4.2 ns tr Rise Time 4.8 ns td(off) Turn Off Delay Time 10.4 ns tƒ Fall Time 2.4 ns DIODE CHARACTERISTICS VSD Diode Forward Voltage ISD = 40A, VGS = 0V 0.8 1 V Qrr Reverse Recovery Charge VDS= 30V, IF = 40A, di/dt = 300A/μs 68 nC trr Reverse Recovery Time 49 ns 4.2 Thermal Information TA = 25°C unless otherwise stated THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-Case Thermal Resistance 1.3 °C/W RθJA Junction-to-Ambient Thermal Resistance 62 www.ti.com CSD18534KCS SLPS383C – SEPTEMBER 2012 – REVISED MARCH 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 3 Product Folder Links: CSD18534KCS |
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