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IRFU6215PBF.. Datasheet(PDF) 1 Page - International Rectifier |
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IRFU6215PBF.. Datasheet(HTML) 1 Page - International Rectifier |
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1 / 11 page  IRFR/U6215 PRELIMINARY HEXFET® Power MOSFET VDSS = -150V RDS(on) = 0.295Ω ID = -13A Description 5/11/98 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V -13 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V -9.0 A IDM Pulsed Drain Current -44 PD @TC = 25°C Power Dissipation 110 W Linear Derating Factor 0.71 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 310 mJ IAR Avalanche Current -6.6 A EAR Repetitive Avalanche Energy 11 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.4 RθJA Junction-to-Ambient (PCB mount) ** ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 Thermal Resistance D -P A K T O -252 A A I-P A K TO -25 1A A l P-Channel l 175°C Operating Temperature l Surface Mount (IRFR6215) l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through- hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. PD - 91749 www.irf.com 1 S D G |
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