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DSPIC33F Datasheet(PDF) 68 Page - Microchip Technology |
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DSPIC33F Datasheet(HTML) 68 Page - Microchip Technology |
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68 / 80 page ![]() dsPIC33F/PIC24H PROGRAMMING SPECIFICATION DS70152D-page 68 Preliminary © 2007 Microchip Technology Inc. 6.0 PROGRAMMING THE PROGRAMMING EXECUTIVE TO MEMORY 6.1 Overview If it is determined that the programming executive is not present in executive memory (as described in Section 3.2 “Confirming the Presence of the Pro- gramming Executive”), it must be programmed into executive memory using ICSP, as described in Section 5.0 “Device Programming – ICSP”. Storing the programming executive to executive memory is similar to normal programming of code memory. Namely, the executive memory must first be erased, and then the programming executive must be programmed 64 words at a time. This control flow is summarized in Table 6-1. TABLE 6-1: PROGRAMMING THE PROGRAMMING EXECUTIVE Command (Binary) Data (Hex) Description Step 1: Exit Reset vector and erase executive memory. 0000 0000 0000 0000 000000 000000 040200 000000 NOP NOP GOTO 0x200 NOP Step 2: Initialize the NVMCON to erase a page of executive memory. 0000 0000 24072A 883B0A MOV #0x4042, W10 MOV W10, NVMCON Step 3: Initiate the erase cycle, wait for erase to complete and make sure WR bit is clear. 0000 0000 0000 - 0000 0000 0000 0001 A8E761 000000 000000 - 807600 887840 000000 <VISI> BSET NVMCON, #15 NOP NOP Externally time ‘P12’ msec (see Section TABLE 8-1: “AC/DC Characteristics and Timing Requirements” ) to allow suffi- cient time for the Page Erase operation to complete. MOV NVMCON, W0 MOV W0, VISI NOP Clock out contents of VISI register. Repeat until the WR bit is clear. Step 4: Repeat Step 3 four times to erase all four pages of executive memory. Step 5: Initialize the NVMCON to program 64 instruction words. 0000 0000 24001A 883B0A MOV #0x4001, W10 MOV W10, NVMCON Step 6: Initialize TBLPAG and the write pointer (W7). 0000 0000 0000 0000 200800 880190 EB0380 000000 MOV #0x80, W0 MOV W0, TBLPAG CLR W7 NOP |
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