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G3R40MT12K Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza G3R40MT12K
Descripción Electrónicos  SiC N-Channel MOSFET
PDF  5 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

G3R40MT12K Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISCF8072
eq G3R40MT12K
SiC N-Channel MOSFET
www.iscsemi.com
1
FEATURES
· Drain Current -ID= 40A@ TC=100℃
· Drain Source Voltage -VDSS= 1200V(Min)
· Static Drain-Source On-Resistance
-RDS(on) =52mΩ(Max)@VGS= 10V
APPLICATIONS
· High Voltage DC-DC Converters
· Uninterruptible Power Supply (UPS)
· Switched Mode Power Supplies
Absolute Maximum Ratings(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
1200
V
VGS
Gate-Source Voltage-Continuous
-10/+25
V
ID
Drain Current-Continuous @TC=100℃
40
A
IDM
Drain Current-Single Pulse
140
A
PD
Total Dissipation @TC=25℃
203
W
TJ
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
TYP.
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.74
℃
/W


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