G3R40MT12K datasheet(2/5 Pages) ISC

2 / 5 page

ISCF8072

eq G3R40MT12K

SiC N-Channel MOSFET

www.iscsemi.com

ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0, ID= 0.1mA

1200

IDSS

Zero Gate Voltage Drain Current

VDS= 1200V, VGS= 0

IGSS

Gate-Body Leakage Current

VGS= -10/+25V,VDS= 0

100

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID= 10mA

2.2

4.0

RDS(on)

Drain-Source On-Resistance

VGS= 10V, ID= 35A

mΩ

gfs

Transconductance

VDS= 10V, ID= 33.3A

Gate resistance

VAC = 25mV, f=1MHz

0.6

Ciss

Input Capacitance

VGS = 0V,

VDS = 1000V,

f = 1.0MHz,

VAC = 25mV

2766

Coss

Output Capacitance

125

Crss

Reverse Transfer Capacitance

Total Gate Charge

VDS =800V,

ID = 33.3A,

VGS = 0/15V

112

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

EON

Turn-On Switching Energy

VDD = 800V,

ID = 20A,

VGS = -4/+15V,

RG = 2.5Ω,

L = 120uH

701

EOFF

Turn-Off Switching Energy

td(on)

Turn-on Delay Time

13.4

Turn-on Rise Time

5.4

td(off)

Turn-off Delay Time

Turn-off Fall Time

Drain - Source Body Diode Characteristics

ISD

Continuous Source Current

VGS = -5 V

ISM

Pulsed Source Current

140

VSD

Diode Forward Voltage

ISD=17A, VGS= -5V

4.5

trr

Reverse Recovery Time

VR =800V, ID = 33.3A,

diF/dt = 1070A /μs,

Qrr

Reverse Recovery Charge

288

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