SPD30P06 datasheet(4/9 Pages) EVVOSEMI

No. de pieza	SPD30P06

Descripción Electrónicos	-60V P-Channel MOSFET

PDF	9 Pages

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Fabricante Electrónico	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

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Electrical Characteristics,at T j = 25 °C, unless

Unit

Values

Symbol

Parameter

min.

typ.

max.

Qgs

3.7

5.6

Qgd

13.8

20.7

Dynamic Characteristics

Gate to source charge

VDD = -48 V, ID = -30 A

Gate to drain charge

VDD = -48 V, ID = -30 A

Gate charge total

VDD = -48 V, ID = -30 A, VGS = 0 to -10 V

Gate plateau voltage

VDD = -48 V , ID = -30 A

V(plateau)

-5.2

Parameter

Symbol

Values

Unit

min.

typ.

max.

Reverse Diode

Inverse diode continuous forward current

TC = 25 °C

-30

Inverse diode direct current,pulsed

TC = 25 °C

ISM

-120

Inverse diode forward voltage

VGS = 0 V, IF = -30

VSD

-1.3

-1.7

Reverse recovery time

VR = -30 V, IF=IS , diF/dt = 100 A/µs

trr

64.6

Reverse recovery charge

VR = -30 V, IF=lS , diF/dt = 100 A/µs

Qrr

153

230

Rev:2023A2

SPD30P06

-60V P-Channel MOSFET

SPD30P06 Datasheet(PDF) 4 Page - EVER SEMICONDUCTOR CO.,LIMITED

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