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M750000004 Datasheet(PDF) 107 Page - SPANSION

No. de pieza M750000004
Descripción Electrónicos  128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
PDF  129 Pages
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January 14, 2004
Am75PDL191CHHa/Am75PDL193CHHa
105
ADV ANCE
I N FO RMAT I O N
PSRAM DC CHARACTERISTICS
Recommended DC Operating Conditions (Note 1)
Notes:
1.
TA = -40 to 85°C, otherwise specified.
2.
Overshoot: VCC + 1.0 V in case of pulse width
≤ 20 ns.
3.
Undershoot: -1.0 V in case of pulse width
≤ 20 ns.
4.
Overshoot and undershoot are sampled, not 100% tested.
Capacitance (f= 1MHz, TA = 25
°C)
Note: Capacitance is sampled, not 100% tested.
DC and Operating Characteristics
Note: Typical values are tested at V
CC= 2.9 V, TA= 25°C and not guaranteed.
Item
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
2.7
2.9
3.1
V
Ground
V
SS
00
0
V
Input High Voltage
V
IH
2.2
-
V
CC + 0.3
(Note 2)
V
Input Low Voltage
V
IL
-0.3 (Note 3)
-
0.6
V
Item
Symbol
Test Condition
Min
Max
Unit
Input Capacitance
C
IN
V
IN= 0 V
-
8
pF
Input/Output Capacitance
C
IO
V
IO= 0 V
-
10
pF
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Leakage Current
I
LI
V
IN= VSS to VCC
-1
-
1
µs
Output Leakage Current
I
LO
CS#1s= V
IH, CS2s= VIH or WE#= VIL, VIO= VSS to VCC
-1
-
1
µs
Average Operating Current
I
CC1
Cycle time = 1ms, 100% duty, I
IO= 0 mA,
CS#1s
≤ 0.2 V, CS2s ≥ V
CC
≤ 0.2 V or
V
IN
≥ V
CC-0.2 V
-30
7
mA
I
CC2
Cycle Time = Min, I
IO = 0 mA, 100% duty, IIO = 0 mA,
CS#1s = V
IL, CS2s = VIH, VIN=VIL or VIH
--
35
mA
Output Low Voltage
V
OL
I
OL= 2.1 mA
-
-
0.4
V
Output High Voltage
V
OH
I
OH= -1.0 mA
2.4
-
-
V
Standby Current (CMOS)
I
SB1
CS#1s
≥ V
CC-0.2 V, CS2s
≥ V
CC-0.2 V,
Other inputs= V
SS to VCC
--
80
µs
Deep Power Down
I
SBD
CS2s
≤ 0.2V, Other inputs= V
SS to VCC
--
20
µs



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