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DMN2120UFCL Datasheet(PDF) 3 Page - Diodes Incorporated

No. de pieza DMN2120UFCL
Descripción Electrónicos  20V N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN2120UFCL Datasheet(HTML) 3 Page - Diodes Incorporated

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DMN2120UFCL
Document number: DS40585 Rev. 3 - 2
3 of 7
www.diodes.com
July 2019
© Diodes Incorporated
DMN2120UFCL
0.0
2.0
4.0
6.0
8.0
10.0
0
0.5
1
1.5
2
2.5
3
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS = 1.2V
V
GS = 1.5V
V
GS = 1.8V
V
GS = 2.0V
V
GS = 3.0V
V
GS = 4.5V
V
GS = 4.0V
0
1
2
3
4
5
0
0.5
1
1.5
2
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS = 5V
TJ = -55℃
TJ = 25℃
TJ = 85℃
TJ = 125℃
TJ = 150℃
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0.11
0.12
0.13
0.14
0
2
4
6
8
10
I
D, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
V
GS = 2.5V
V
GS = 1.8V
V
GS = 4.5V
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0
2
4
6
8
10
12
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D = 9.0A
I
D = 3.0A
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0.11
0
2
4
6
8
10
I
D, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
V
GS = 4.5V
TJ = -55℃
TJ = 25℃
TJ = 85℃
TJ = 125℃
TJ = 150℃
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
V
GS = 1.8V, ID = 3.0A
V
GS = 4.5V, ID = 9.0A
V
GS = 2.5V, ID = 7.5A



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