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STW34NB20 Datasheet(PDF) 4 Page - STMicroelectronics |
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STW34NB20 Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 10 page ![]() STW34NB20 4/10 Table 11. Source Drain Diode Note: 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Figure 3. Safe Operating Area Figure 4. Thermal Impedance Figure 5. Output Characteristics Figure 6. Transfer Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 34 A ISDM (1) Source-drain Current (pulsed) 136 A VSD (2) Forward On Voltage ISD = 34 A; VGS = 0 1.5 V trr Reverse Recovery Time ISD = 34 A; di/dt = 100 A/µs 290 ns Qrr Reverse RecoveryCharge VDD = 50 V; Tj = 150 °C (see test circuit, Figure 18) 2.7 µC IRRAM Reverse RecoveryCharge 18.5 A |
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