STW34NB20 datasheet(2/10 Pages) STMICROELECTRONICS

No. de pieza	STW34NB20

Descripción Electrónicos	N-CHANNEL 200V - 0.062 OHM - 34A TO-247 PowerMESH MOSFET

PDF	10 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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STW34NB20

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Table 3. Absolute Maximum Ratings

Note: 1. Pulse width limited by safe operating area

Table 4. Thermal Data

Table 5. Avalanche Characteristics

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

200

VDGR

Drain- gate Voltage (RGS = 20 kΩ)

200

VGS

Gate-source Voltage

± 30

Drain Current (cont.) at TC = 25 °C

Drain Current (cont.) at TC = 100 °C

IDM

(1)

Drain Current (pulsed)

136

Ptot

Total Dissipation at TC = 25 °C

180

Derating Factor

1.44

W°/C

Tstg

Storage Temperature

-65 to 150

°C

Max. Operating Junction Temperature

150

°C

Symbol

Parameter

Value

Unit

Rthj-case

Thermal Resistance Junction-case

Max

0.69

°C/W

Rthj-amb

Thermal Resistance Junction-ambient

Max

°C/W

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max, δ < 1%)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C; ID = IAR; VDD = 50 V)

650

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