36NM60N datasheet(1/15 Pages) STMICROELECTRONICS

No. de pieza	36NM60N

Descripción Electrónicos	Automotive-grade N-channel 600 V, 0.093 Ω, 29 A, MDmesh™ II Power MOSFET in a D²PAK package

PDF	15 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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This is information on a product in full production.

June 2015

DocID16099 Rev 5

1/15

STB36NM60N

Automotive-grade N-channel 600 V, 0.093

Ω, 29 A, MDmesh™ II

Power MOSFET in a D²PAK package

Datasheet — production data

Figure 1. Internal schematic diagram

Features

• Designed for automotive applications and

AEC-Q101 qualified

• 100% avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET

developed using the second generation of

MDmesh™ technology. This revolutionary Power

MOSFET associates a vertical structure to the

company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. It is

therefore suitable for the most demanding high

efficiency converters.

D PAK

2

1

3

TAB

Order code

VDS @

TJmax

RDS(on)

max.

ID

PTOT

STB36NM60N

650 V

0.105

Ω

29 A 210 W

Table 1. Device summary

Order code

Marking

Packages

Packaging

STB36NM60N

36NM60N

D2PAK

Tape and reel

www.st.com

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