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36NM60N Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza 36NM60N
Descripción Electrónicos  Automotive-grade N-channel 600 V, 0.093 Ω, 29 A, MDmesh™ II Power MOSFET in a D²PAK package
PDF  15 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

36NM60N Datasheet(HTML) 5 Page - STMicroelectronics

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STB36NM60N
Electrical characteristics
15
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
Turn-on delay time
VDD = 300 V, ID = 14.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14)
-17
-
ns
tr
Rise time
-
34
-
ns
td(off)
Turn-off-delay time
-
106
-
ns
tf
Fall time
-
67
-
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
-
29
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
-
116
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD = 29 A, VGS = 0
-
1.6
V
trr
Reverse recovery time
ISD = 29 A, di/dt = 100 A/µs
VDD= 60 V (see Figure 19)
-408
ns
Qrr
Reverse recovery charge
-
8
µC
IRRM
Reverse recovery current
-
39
A
trr
Reverse recovery time
ISD = 29 A, di/dt = 100 A/µs
VDD= 60 V Tj = 150 °C
(see Figure 19)
-480
ns
Qrr
Reverse recovery charge
-
10
µC
IRRM
Reverse recovery current
-
42
A



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