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36NM60N Datasheet(PDF) 5 Page - STMicroelectronics |
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36NM60N Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 15 page ![]() DocID16099 Rev 5 5/15 STB36NM60N Electrical characteristics 15 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) Turn-on delay time VDD = 300 V, ID = 14.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14) -17 - ns tr Rise time - 34 - ns td(off) Turn-off-delay time - 106 - ns tf Fall time - 67 - ns Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current - 29 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 116 A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 29 A, VGS = 0 - 1.6 V trr Reverse recovery time ISD = 29 A, di/dt = 100 A/µs VDD= 60 V (see Figure 19) -408 ns Qrr Reverse recovery charge - 8 µC IRRM Reverse recovery current - 39 A trr Reverse recovery time ISD = 29 A, di/dt = 100 A/µs VDD= 60 V Tj = 150 °C (see Figure 19) -480 ns Qrr Reverse recovery charge - 10 µC IRRM Reverse recovery current - 42 A |
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