TPD2015FN datasheet(8/17 Pages) TOSHIBA

No. de pieza	TPD2015FN

Descripción Electrónicos	Toshiba Intelligent Power Device Silicon Monolithic MOS Integrated Circuit

PDF	17 Pages

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Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

Página de inicio	http://www.semicon.toshiba.co.jp/eng

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TPD2015FN

2022-03-15

Toshiba Electronic Devices & Storage Corporation

9. Operating Ranges

Table 9.1 Operating supply voltage

Characteristics

Symbol

Condition

Min

Typ.

Max

Unit

Operating supply voltage

VDD(opr)

Tj = 25°C

10. Electrical Characteristics

Table 10.1 Electrical Characteristics

(Tj = 25°C, VDD = 8 to 40V unless otherwise specified)

Characteristics

Symbol

Note or Test Condition

Min

Typ.

Max

Unit

Supply current

IDD(OFF)

VDD =24V, VIN = 0V

1.9

2.6

IDD(ON)

VDD =24V, VIN = 5V,

All outputs open

3.1

4.2

Input voltage

“L” level

VIL

0.8

“H” level

VIH

2.0

Input current

IIL

VIN = 0V

−1

μA

IIH

VIN = 5V

On resistance

RDS(ON)

VDD = 12V, VIN = 5V,

IOUT = 0.5A

0.40

0.55

Output leakage current

IOL

VDD = 40V, VIN = 0V,

Per output

μA

Over current protection

IOC

1.0

1.8

2.8

Over current protection

operating time

tOFF-DUTY

1.5

3.0

4.5

Over

temperature

detection

Temperature

TSD

150

175

200

°C

Hysteresis

ΔTSD

Switching time

tON

Refer to test circuit 1

μs

tOFF

Single pulse avalanche energy

Ta = 25°C, IOUT = 0.75A

(1-channel operation)

150

2) Not subject to production test.

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