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TPD2015FN Datasheet(PDF) 5 Page - Toshiba Semiconductor

No. de pieza TPD2015FN
Descripción Electrónicos  Toshiba Intelligent Power Device Silicon Monolithic MOS Integrated Circuit
PDF  17 Pages
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPD2015FN Datasheet(HTML) 5 Page - Toshiba Semiconductor

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TPD2015FN
2022-03-15
5
© 2022
Toshiba Electronic Devices & Storage Corporation
7. Operational Description
7.1.
Over temperature protection
To prevent damage due to temperature rise, the outputs are turned off when the junction temperature of this
product exceeds the over temperature detection temperature (TSD).If the junction temperature falls below the
hysteresis set temperature (TSD-
ΔTSD), the product will return to normal operation.
7.2.
Over current protection
When the output current exceeds the over current detection value (IOC) due to a load short circuit, etc., the output
is turned off during the over current protection operating time (tOFF-DUTY).After that, the output returns, but if the
over current condition continues, the output is turned off again for the over current protection operating time (tOFF-
DUTY
).
7.3.
Timing chart
Figure 7.1
Timing chart
TSD
VIN
VOUT
Tj
IOC
IOUT
tOFF-DUTY
tOFF-DUTY
Over temperature
Over current
Over current
Normal
Over temperature
Over current
Normal
Inductive load
Energy
protection
protection
protection
regeneration
T
SD-ΔTSD



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