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WFF730 Datasheet(PDF) 3 Page - Wisdom technologies Int`l |
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WFF730 Datasheet(HTML) 3 Page - Wisdom technologies Int`l |
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3 / 7 page ![]() 0 3 6 9 12 15 18 0 1 2 3 4 5 V GS = 20V V GS = 10V Note : T ※ J = 25℃ I D, Drain Current [A] 246 8 10 10 -1 10 0 10 1 150 oC 25 oC -55 oC Notes : ※ 1. V DS = 40V 2. 250µs Pulse Test V GS, Gate-Source Voltage [V] 10 -1 10 0 10 1 10 -1 10 0 10 1 V GS Top : 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V Bottom: 5.0V Notes : ※ 1. 250µs PulseTest 2. T C = 25℃ V DS, Drain-Source Voltage [V] 0 3 6 9 1215 1821 2427 0 2 4 6 8 10 12 V DS = 200V V DS = 80V V DS = 320V Note : I ※ D = 6.0 A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 300 600 900 1200 1500 1800 C oss C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd Notes : ※ 1. V GS = 0 V 2. f = 1 MHz C rss C iss V DS, Drain-Source Voltage [V] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150℃ Notes : ※ 1. V GS = 0V 2. 250µs PulseTest 25℃ V SD, Source-Drain voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics |
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