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WFF730 Datasheet(PDF) 2 Page - Wisdom technologies Int`l

No. de pieza WFF730
Descripción Electrónicos  N-Channel MOSFET
PDF  7 Pages
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Fabricante Electrónico  WISDOM [Wisdom technologies Int`l]
Página de inicio  http://www.wisdom-technologies.com/index.aspx
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WFF730 Datasheet(HTML) 2 Page - Wisdom technologies Int`l

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(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Electrical Characteristics
TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 19.0mH, IAS = 6.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 6.0A, di/dt ≤ 300µA/s, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300
µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
400
--
--
V
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.50
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 400 V, VGS = 0 V
--
--
10
µA
VDS = 320 V, TC = 125°C
--
--
100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 3.0 A
--
0.78
0.95
Ω
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
670
870
pF
Coss
Output Capacitance
--
95
125
pF
Crss
Reverse Transfer Capacitance
--
16
21
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 200V, ID = 6.0 A,
RG = 25 Ω
--
20
50
ns
tr
Turn-On Rise Time
--
50
110
ns
td(off)
Turn-Off Delay Time
--
90
190
ns
tf
Turn-Off Fall Time
--
55
120
ns
Qg
Total Gate Charge
VDS = 320 V, ID = 6.0A,
VGS = 10 V
--
25
33
nC
Qgs
Gate-Source Charge
--
5
--
nC
Qgd
Gate-Drain Charge
--
10
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
6.0
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
24
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 6.0 A
--
--
1.5
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 6.0 A,
dIF / dt = 100 A/µs
--
220
--
ns
Qrr
Reverse Recovery Charge
--
2.0
--
µC



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