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L99LD21 Datasheet(PDF) 46 Page - STMicroelectronics |
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L99LD21 Datasheet(HTML) 46 Page - STMicroelectronics |
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46 / 73 page ![]() SPI functional description L99LD21 46/73 DS11130 Rev 5 5.4.4 Customer test and trimming procedure description General description The writing procedure is performed connecting the two terminals of the anti-fuse capacitor at 15 V and ground respectively. This is achieved by providing 15V on VS battery pin. After this phase, the capacitor is burnt and behaves like a resistance; its value (the residual resistance) strictly depends on the effectiveness of the burning procedure. During physical reading operation, the residual resistance is compared with a fixed threshold. If the residual resistance is greater than threshold a bit 0 is given, and the OTP cell is considered unwritten, otherwise a bit 1 is given and the OTP cell is considered written. Blank check reading is executed to verify that all anti-fuses are unwritten after fabrication, while margin mode, usually performed immediately after the burning process, is used to verify if burned cells are properly written. Executing a blank-check reading after all writing operations have been completed allows verifying that unwritten cells haven’t been degraded by burning processes. Recommended test flow In Figure 10 and in Table 28 the recommended testing procedure is shown and described. Testing procedure starts with a blank check read, to verify that all anti-fuse rows are unwritten. After this operation, it is possible to select the bits to be written and to start programming. Writing operation should be performed up to 3 times. At the end of programming, a reading procedure should be performed in Margin Mode. At the end of the test, it is strongly recommended executing a blank-check read in order to verify that unwritten cells haven’t been degraded. Table 27 summarizes the writing test conditions. Note: An external capacitance must be applied between VS and GROUND pins. Table 27. Writing test conditions Symbol Parameter Conditions Min Typ Max Unit VS 15 V supply 15 V IHV HV current during programming 28 mA — Temperature -40 27 150 °C — External capacitance 2 5 10 nF |
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