IRFBC20L datasheet(1/11 Pages) VISHAY

No. de pieza	IRFBC20L

Descripción Electrónicos	Power MOSFET

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L

www.vishay.com

Vishay Siliconix

S21-0943-Rev. D, 20-Sep-2021

1

Document Number: 91107

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Power MOSFET

FEATURES

• Surface-mount (IRFBC20S, SiHFBC20S)

• Low-profile through-hole (IRFBC20L, SiHFBC20L)

• Available in tape and reel (IRFBC20, SiiHFBC20S)

• Dynamic dV/dt rating

• 150 °C operating temperature

• Fast switching

• Fully avalanche rated

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note



* This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For



example, parts with lead (Pb) terminations are not RoHS-compliant.



Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.



The D2PAK is a surface-mount power package capable of

the accommodating die sizes up to HEX-4. It provides the

highest

power

capability

and

the

lowest

possible

on-resistance in any existing surface-mount package. The

D2PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface-mount application. The

through-hole version (IRFBC20L, SiHFBC20L) is a available

for low-profile applications.

Note

a. See device orientation

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. VDD = 50 V, starting TJ = 25 °C, L = 31 mH, Rg = 25 , IAS = 2.2 A (see fig. 12)

c. ISD  2.2 A, dI/dt  40 A/μs, VDD  VDS, TJ  150 °C

d. 1.6 mm from case

e. Uses IRFBC20, SiHFBC20 data and test conditions

PRODUCT SUMMARY

VDS (V)

600

RDS(on) ()VGS = 10 V

4.4

Qg max. (nC)

18

Qgs (nC)

3.0

Qgd (nC)

8.9

Configuration

Single

N-Channel MOSFET

G

D

S

D2PAK (TO-263)

G

D

S

I2PAK (TO-262)

G

D

S

Available

ORDERING INFORMATION

Package

D2PAK (TO-263)

I2PAK (TO-262)

Lead (Pb)-free and halogen-free

SiHFBC20S-GE3

SiHFBC20STRL-GE3 a

SiHFBC20L-GE3

Lead (Pb)-free

IRFBC20SPbF

IRFBC20STRLPbF a

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

VDS

600

V

Gate-source voltage

VGS

± 20

Continuous drain current e

VGS at 10 V

TC = 25 °C

ID

2.2

A

TC = 100 °C

1.4

Pulsed drain current a, e

IDM

8.0

Linear derating factor

0.40

W/°C

Single pulse avalanche energy b, e

EAS

84

mJ

Avalanche current a

IAR

2.2

A

Repetiitive avalanche energy a

EAR

5.0

mJ

Maximum power dissipation

TA = 25 °C

PD

3.1

W

TC = 25 °C

50

Peak diode recovery dv/dt c, e

dv/dt

3.0

V/ns

Operating junction and storage temperature range

TJ, Tstg

-55 to +150

°C

Soldering recommendations (peak temperature) d

for 10 s

300

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