6406 datasheet(2/7 Pages) TUOFENG

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Symbol

Min

Typ

Max

Units

BVDSS

VDS=30V, VGS=0V

IGSS

VGS(th)

Gate Threshold Voltage

1.3

1.8

2.4

2.1

Ω

gFS

130

VSD

0.67

140

Ciss

4300

5200

Coss

720

Crss

420

Ω

Qg(10V)

100

Qg(4.5V)

Qgs

Qgd

tD(on)

6.5

tD(off)

trr

SWITCHING PARAMETERS

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Gate resistance

VGS=0V, VDS=0V, f=1MHz

VGS=10V, VDS=15V, RL=0.75Ω,

RGEN=3Ω

Reverse Transfer Capacitance

VGS=0V, VDS=15V, f=1MHz

Turn-Off DelayTime

VGS=10V, VDS=15V, ID=20A

Gate Source Charge

Gate Drain Charge

Total Gate Charge

Body Diode Reverse Recovery Time

Turn-Off Fall Time

Total Gate Charge

IF=20A, dI/dt=500A/µs

Turn-On Rise Time

Static Drain-Source On-Resistance

Diode Forward Voltage

VDS=5V, ID=20A

VGS=4.5V, ID=20A

Forward Transconductance

IS=1A,VGS=0V

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Ω

IDSS

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

µA

Zero Gate Voltage Drain Current

Gate-Body leakage current

VDS=VGS ID=250µA

VDS=0V, VGS= ±16V

VGS=10V, ID=20A

RDS(ON)

Qrr

Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design, and the maximum temperature of 150

C may be used if the PCB allows it.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial

TJ =25°C.

D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

6406

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

N-Channel Enhancement Mode Power MOSFET

www.sztuofeng.com

Feb,2018 V1.0

2.5

3.5

2.6

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