QPD1008LEVB2 datasheet(4/20 Pages) QORVO

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QPD1008L

125W, 50V, DC

– 3.2 GHz, GaN RF Transistor

Data Sheet Rev. I, October 2021 | Subject to change without notice

4 of 20

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Thermal and Reliability Information - CW (1)

Parameter

Test Conditions

Value

Units

Thermal Resistance, Peak IR Surface

Temperature at Average Power (θJC)

PDISS = 21 W, Tbaseplate = 85°C

1.24

ºC/W

Channel Temperature, TCH

111

°C

Thermal Resistance, Peak IR Surface

Temperature at Average Power (θJC)

PDISS = 42 W, Tbaseplate = 85°C

1.33

°C/W

Channel Temperature, TCH

141

°C

Thermal Resistance, Peak IR Surface

Temperature at Average Power (θJC)

PDISS = 63 W, Tbaseplate = 85°C

1.41

ºC/W

Channel Temperature, TCH

174

°C

Thermal Resistance, Peak IR Surface

Temperature at Average Power (θJC)

PDISS = 84 W, Tbaseplate = 85°C

1.51

ºC/W

Channel Temperature, TCH

212

°C

Thermal Resistance, Peak IR Surface

Temperature at Average Power (θJC)

PDISS = 105 W, Tbaseplate = 85°C

1.6

ºC/W

Channel Temperature, TCH

253

°C

Notes:

Thermal resistance measured to bottom of package.

Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates

Thermal and Reliability Information - Pulsed (1)

Parameter

Test Conditions

Value

Units

Thermal Resistance, Peak IR Surface

Temperature at Average Power (θJC)

PDISS = 42 W, Tbaseplate = 85°C

Pulse Width = 128 uS

Duty Cycle = 10%

0.74

ºC/W

Channel Temperature, TCH

116

°C

Thermal Resistance, Peak IR Surface

Temperature at Average Power (θJC)

PDISS = 63 W, Tbaseplate = 85°C

Pulse Width = 128 uS

Duty Cycle = 10%

0.76

°C/W

Channel Temperature, TCH

133

°C

Thermal Resistance, Peak IR Surface

Temperature at Average Power (θJC)

PDISS = 84 W, Tbaseplate = 85°C

Pulse Width = 128 uS

Duty Cycle = 10%

0.77

°C/W

Channel Temperature, TCH

150

°C

Thermal Resistance, Peak IR Surface

Temperature at Average Power (θJC)

PDISS = 105 W, Tbaseplate = 85°C

Pulse Width = 128 uS

Duty Cycle = 10%

0.80

ºC/W

Channel Temperature, TCH

169

°C

Thermal Resistance, Peak IR Surface

Temperature at Average Power (θJC)

PDISS = 126 W, Tbaseplate = 85°C

Pulse Width = 128 uS

Duty Cycle = 10%

0.82

ºC/W

Channel Temperature, TCH

188

°C

Notes:

Thermal resistance measured to bottom of package.

Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates

QPD1008LEVB2 Datasheet(PDF) 4 Page - Qorvo, Inc

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