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QPD1008LEVB2 Datasheet(PDF) 17 Page - Qorvo, Inc |
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QPD1008LEVB2 Datasheet(HTML) 17 Page - Qorvo, Inc |
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17 / 20 page ![]() QPD1008L 125W, 50V, DC – 3.2 GHz, GaN RF Transistor Data Sheet Rev. I, October 2021 | Subject to change without notice 17 of 20 www.qorvo.com 1.1 – 1.5 GHz Application Circuit - Schematic Bias-up Procedure Bias-down Procedure 2. Set VG to -4 V. 3. Turn off RF signal. 4. Set ID current limit to 300 mA. 4. Turn off VD 5. Apply 50 V VD. 5. Wait 2 seconds to allow drain capacitor to discharge 6. Slowly adjust VG until ID is set to 260 mA. 7. Turn off VG 8. Set ID current limit to 0.6 A (Pulsed operation) 9. Apply RF. |
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