QPD1008LEVB2 datasheet(3/20 Pages) QORVO

3 / 20 page

QPD1008L

125W, 50V, DC

– 3.2 GHz, GaN RF Transistor

Data Sheet Rev. I, October 2021 | Subject to change without notice

3 of 20

www.qorvo.com

Pulsed Characterization

– Load-Pull Performance – Efficiency Tuned1

Parameters

Typical Values

Unit

Frequency

GHz

Linear Gain, GLIN

23.5

18.6

15.2

Output Power at 3dB

compression point, P3dB

48.2

50.2

51.0

dBm

Drain Efficiency at 3dB

compression point, DEFF3dB

76.2

74.6

69.7

Gain at 3dB compression point,

G3dB

20.5

15.6

12.2

Notes:

Test conditions unless otherwise noted: VD = +50

V, IDQ = 260 mA, Temp = +25 °C

Pulsed Characterization

– Load-Pull Performance – Power Tuned1

Parameters

Typical Values

Unit

Frequency, F

GHz

Linear Gain, GLIN

22.5

17.5

14.1

Output Power at 3dB

compression point, P3dB

52.0

52.1

51.9

dBm

Drain Efficiency at 3dB

compression point, DEFF3dB

63.4

62.1

59.2

Gain at 3dB compression point

19.5

14.4

11.1

Notes:

Test conditions unless otherwise noted: VD = +50

V, ID = 260 mA, Temp = +25 °C

RF Characterization

– EVB1 Performance at 1.09 GHz1

Parameter

Min

Typ

Max

Units

Linear Gain, GLIN

–

Output Power at 3dB compression point, P3dB

–

51.2

–

dBm

Drain Efficiency at 3dB compression point,

DEFF3dB

–

73.5

–

Gain at 3dB compression point, G3dB

–

Notes:

1. VD = +50 V, IDQ = 260 mA, Temp = +25 °C, Pulse Width = 128 uS, Duty Cycle = 10%

RF Characterization

– Mismatch Ruggedness at 1.09 GHz

Symbol Parameter

dB Compression

Typical

VSWR

Impedance Mismatch Ruggedness

10:1

Test conditions unless otherwise noted: TA = 25 °C, VD = 50 V, IDQ = 260 mA

Driving input power is determined at pulsed 3dB compression under matched condition at EVB output connector.

QPD1008LEVB2 Datasheet(PDF) 3 Page - Qorvo, Inc

QPD1008LEVB2 Datasheet(HTML) 3 Page - Qorvo, Inc

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

Datasheet Descarga

Enlace URL