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PPC5604BAMLL4R Datasheet(PDF) 60 Page - NXP Semiconductors |
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PPC5604BAMLL4R Datasheet(HTML) 60 Page - NXP Semiconductors |
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60 / 109 page ![]() MPC5604B/C Microcontroller Data Sheet, Rev. 15 Package pinouts and signal descriptions NXP Semiconductors 60 ECC circuitry provides correction of single bit faults and is used to improve further automotive reliability results. Some units will experience single bit corrections throughout the life of the product with no impact to product reliability. 2.19.2 Flash power supply DC characteristics Table 31 shows the power supply DC characteristics on external supply. Table 29. Flash module life Symbol C Parameter Conditions Value Unit Min Typ Max P/E CC C Number of program/erase cycles per block over the operating temperature range (TJ) 16 KB blocks 100,000 — — cycles 32 KB blocks 10,000 100,000 — 128 KB blocks 1,000 100,000 — Retention CC C Minimum data retention at 85 °C average ambient temperature1 1 Ambient temperature averaged over duration of application, not to exceed recommended product operating temperature range. Blocks with 0–1,000 P/E cycles 20 — — years Blocks with 1,001–10,000 P/E cycles 10 — — Blocks with 10,001–100,000 P/E cycles 5— — Table 30. Flash read access timing Symbol C Parameter Conditions1 1 V DD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified Max Unit fREAD CC P Maximum frequency for Flash reading 2 wait states 64 MHz C 1 wait state 40 C 0 wait states 20 Table 31. Flash memory power supply DC electrical characteristics Symbol C Parameter Conditions1 Value Unit Min Typ Max IFREAD 2 CC D Sum of the current consumption on VDD_HV and VDD_BV on read access Code flash memory module read fCPU = 64 MHz 3 —15 33 mA Data flash memory module read fCPU = 64 MHz 3 —15 33 |
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