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SIRC18DP Datasheet(PDF) 6 Page - Vishay Siliconix

No. de pieza SIRC18DP
Descripción Electrónicos  N-Channel 30 V (D-S) MOSFET With Schottky Diode
PDF  9 Pages
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIRC18DP Datasheet(HTML) 6 Page - Vishay Siliconix

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SiRC18DP
www.vishay.com
Vishay Siliconix
S21-0843-Rev. D, 09-Aug-2021
6
Document Number: 76402
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76402.
10
100
1000
10000
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
Axis Title
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty Cycle = 0.5
0.2
P
DM
t
1
t
2
1. Duty cycle, D =
2. Per unit base = R
thJA = 65 °C/W
3. T
JM -TA = PDMZthJA
(t)
4. Surface mounted
t
1
t
2
Notes:
10
100
1000
10000
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
Axis Title
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty Cycle = 0.5
0.2



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