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SIRC18DP Datasheet(PDF) 5 Page - Vishay Siliconix

No. de pieza SIRC18DP
Descripción Electrónicos  N-Channel 30 V (D-S) MOSFET With Schottky Diode
PDF  9 Pages
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIRC18DP Datasheet(HTML) 5 Page - Vishay Siliconix

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SiRC18DP
www.vishay.com
Vishay Siliconix
S21-0843-Rev. D, 09-Aug-2021
5
Document Number: 76402
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating a
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
10
100
1000
10000
0
40
80
120
160
200
0
25
50
75
100
125
150
Axis Title
T
C - Case Temperature (°C)
2nd line
Package Limited
10
100
1000
10000
0
14
28
42
56
70
0
255075
100
125
150
Axis Title
T
C - Case Temperature (°C)
2nd line
10
100
1000
10000
0
0.5
1.0
1.5
2.0
2.5
0
25
50
75
100
125
150
Axis Title
T
A - Ambient Temperature (°C)
2nd line



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