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STM32F732IE Datasheet(PDF) 142 Page - STMicroelectronics

No. de pieza STM32F732IE
Descripción Electrónicos  Arm® Cortex®-M7 32b MCUFPU, 462DMIPS, up to 512KB Flash 256164KB RAM, USB OTG HS/FS, 18 TIMs, 3 ADCs, 21 com IF
PDF  226 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STM32F732IE Datasheet(HTML) 142 Page - STMicroelectronics

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Electrical characteristics
STM32F732xx STM32F733xx
142/226
DS11854 Rev 6
6.3.17
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
•
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
•
FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 56. They are based on the EMS levels and classes
defined in application note AN1709.
As a consequence, it is recommended to add a serial resistor (1 kΩ) located as close as
possible to the MCU to the pins exposed to noise (connected to tracks longer than 50 mm
on PCB).
tRET
Data retention
1 kcycle(3) at TA = 85 °C
30
Years
1 kcycle(3) at TA = 105 °C
10
10 kcycles(3) at TA = 55 °C
20
1. Tj can not go above 125°C (current consumption limitation).
2. Guaranteed by characterization results.
3. Cycling performed over the whole temperature range.
Table 55. Flash memory endurance and data retention (continued)
Symbol
Parameter
Conditions(1)
Value
Unit
Min(2)
Table 56. EMS characteristics
Symbol
Parameter
Conditions
Level/
Class
VFESD
Voltage limits to be applied on any I/O
pin to induce a functional disturbance
VDD = 3.3 V, TA = +25 °C,
fHCLK = 216 MHz,
conforms to IEC 61000-4-2
2B
VEFTB
Fast transient voltage burst limits to be
applied through 100 pF on VDD and VSS
pins to induce a functional disturbance
VDD = 3.3 V, TA =+25 °C,
fHCLK = 216 MHz,
conforms to IEC 61000-4-2
5A



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