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STM32F732IE Datasheet(PDF) 140 Page - STMicroelectronics

No. de pieza STM32F732IE
Descripción Electrónicos  Arm® Cortex®-M7 32b MCUFPU, 462DMIPS, up to 512KB Flash 256164KB RAM, USB OTG HS/FS, 18 TIMs, 3 ADCs, 21 com IF
PDF  226 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F732IE Datasheet(HTML) 140 Page - STMicroelectronics

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Electrical characteristics
STM32F732xx STM32F733xx
140/226
DS11854 Rev 6
6.3.15
USB HS PHY external resistor characteristics
(on STM32F733xx devices)
6.3.16
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
The devices are shipped to customers with the Flash memory erased.
Table 51. USB HS PHY external resistor characteristics (on STM32F733xx devices)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
REXT
External calibration resistor connected
(to GND) from OTG_HS_REXT
Required if using
USB HS PHY
2.97
3.00
3.03
k
Ω
Table 52. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IDD
Supply current
Write/erase 8-bit mode, VDD = 1.7 V
-
6.7
-
mA
Write/erase 16-bit mode, VDD = 2.1 V
-
9.2
-
Write/erase 32-bit mode, VDD = 3.3 V
-
12.6
-
Table 53. Flash memory programming
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1) Unit
tprog
Word programming time
Program/erase parallelism
(PSIZE) = x 8/16/32
-16
100(2)
µs
tERASE16KB
Sector (16 Kbytes) erase
time
Program/erase parallelism
(PSIZE) = x 8
-
346
418
ms
Program/erase parallelism
(PSIZE) = x 16
-
252
312
Program/erase parallelism
(PSIZE) = x 32
-
208
265
tERASE128KB
Sector (128 Kbytes) erase
time
Program/erase parallelism
(PSIZE) = x 8
-
1953
2500
ms
Program/erase parallelism
(PSIZE) = x 16
-
1252
1639
Program/erase parallelism
(PSIZE) = x 32
-
927
1322
tERASE64KB
Sector (64 Kbytes) erase
time
Program/erase parallelism
(PSIZE) = x 8
-
1027
1298
ms
Program/erase parallelism
(PSIZE) = x 16
-
675
840
Program/erase parallelism
(PSIZE) = x 32
-
505
682



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