HMC1126ACEZ-R7 datasheet(15/21 Pages) AD

No. de pieza	HMC1126ACEZ-R7

Descripción Electrónicos	GaAs, pHEMT, Low Noise Amplifier, 400 MHz to 52 GHz

PDF	21 Pages

Scroll/Zoom	100%

Fabricante Electrónico	AD [Analog Devices]

Página de inicio	http://www.analog.com

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15 / 21 page

Data Sheet

HMC1126ACEZ

Rev. 0 | Page 15 of 21

THEORY OF OPERATION

The HMC1126ACEZ is a GaAs, pHEMT, low noise amplifier.

The low noise amplifier uses a fundamental cell of two field

effect transistors (FETs), as shown in Figure 56. This

fundamental cell is duplicated a number of times, thereby

increasing the operational bandwidth.

The negative VGG1 sets the supply current, and the voltage on

VGG2 ensures that there are approximately equal dc voltages

across the top and bottom FETs. The RFIN and RFOUT pins

are ac-coupled and matched to 50 Ω. VDD is applied through an

integrated choke. The 0.1 μF and 100 pF decoupling capacitors

are integrated. As a result, no external passive components are

required for operation.

GND

RFIN

VGG1

VGG2

VDD

RFOUT

100pF

0.1µF

100pF

0.1µF

100pF

0.1µF

Figure 56. Simplified Block Diagram

HMC1126ACEZ-R7 Datasheet(PDF) 15 Page - Analog Devices