TGF2977-SM datasheet(1/28 Pages) QORVO

No. de pieza	TGF2977-SM

Descripción Electrónicos	DC ??12 GHz, 32 V, 5 W GaN RF Transistor

PDF	28 Pages

Scroll/Zoom	100%

Fabricante Electrónico	QORVO [Qorvo, Inc]

Página de inicio	https://www.qorvo.com/

Logo

1 / 28 page

TGF2977-SM

DC – 12 GHz, 32 V, 5 W GaN RF Transistor

Datasheet Rev. B, July 25, 2017 | Subject to change without notice

- 1 of 28 -

www.qorvo.com

3 x 3mm Package

Product Overview

The Qorvo TGF2977-SM is a 5 W (P3dB) discrete GaN on SiC

HEMT which operates from DC to 12 GHz and 32 V supply.

The device is in an industry standard overmolded package

and is ideally suited for avionics, military, marine and

weather radar. The device can support pulsed and linear

operations.

Lead-free and ROHS compliant.

Evaluation boards are available upon request.

Functional Block Diagram

Key Features

• Frequency: DC to 12 GHz

• Output Power (P3dB)1: 4.8 W

• Linear Gain1: 13 dB

• Typical PAE3dB1: 50%

• Operating Voltage: 32 V

• CW and Pulse capable

Note 1: @ 9 GHz Load Pull

Applications

• Military radar

• Commercial radar

o

Avionics

o

Marine

o

Weather

Ordering info

Part No.

ECCN

Description

TGF2977-SM

EAR99

QFN Packaged Part

TGF2977-

SMEVBP01

EAR99

9 – 10 GHz EVB

TGF2977-

SMEVBP02

EAR99

2.6 – 4.2 GHz EVB

2

3

4

12

11

10

9

1

5

6

7

8

16

15

14

13

VG, RF IN

VD, RF OUT

N/C

VG, RF IN

Número de pieza similar - TGF2977-SM

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Qorvo, Inc	TGF2978-SM	2Mb / 33P	20 W, 32 V, DC to 12 GHz, GaN RF Transistor
	TGF2978-SMEVB01	2Mb / 33P	20 W, 32 V, DC to 12 GHz, GaN RF Transistor
	TGF2978-SMEVB02	2Mb / 33P	20 W, 32 V, DC to 12 GHz, GaN RF Transistor
	TGF2978-SMEVB03	2Mb / 33P	20 W, 32 V, DC to 12 GHz, GaN RF Transistor
	TGF2978-SMEVB04	2Mb / 33P	20 W, 32 V, DC to 12 GHz, GaN RF Transistor

More results

Descripción similar - TGF2977-SM

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Qorvo, Inc	TGF2978-SM	2Mb / 33P	20 W, 32 V, DC to 12 GHz, GaN RF Transistor
	TGF2965-SM	1Mb / 21P	5 W, 32 V, 0.03?? GHz, GaN RF Input-Matched Transistor
	TGF2933	4Mb / 24P	DC ??25 GHz, 28 V, 7 W GaN RF Transistor
	TGF2934	3Mb / 24P	DC ??25 GHz, 28 V, 14 W GaN RF Transistor
	TGF3021-SM	2Mb / 31P	30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor
	TGF3020-SM	2Mb / 24P	4 ??6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor
	QPD1016	1Mb / 24P	DC ??1.7 GHz, 50 V, 500 W GaN RF Transistor August 17, 2018
	QPD0030	1Mb / 12P	45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor October 7, 2019
	QPD1016L	1Mb / 24P	DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor September 2020
	TGF3020-SM	2Mb / 19P	4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor February 2022

More results

TGF2977-SM Datasheet(PDF) 1 Page - Qorvo, Inc

TGF2977-SM Datasheet(HTML) 1 Page - Qorvo, Inc

Número de pieza similar - TGF2977-SM

Descripción similar - TGF2977-SM

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28

Datasheet Descarga

Enlace URL