TGF2977-SM datasheet(8/28 Pages) QORVO

No. de pieza	TGF2977-SM

Descripción Electrónicos	DC ??12 GHz, 32 V, 5 W GaN RF Transistor

PDF	28 Pages

Scroll/Zoom	100%

Fabricante Electrónico	QORVO [Qorvo, Inc]

Página de inicio	https://www.qorvo.com/

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TGF2977-SM

DC – 12 GHz, 32 V, 5 W GaN RF Transistor

Datasheet Rev. B, July 25, 2017 | Subject to change without notice

- 8 of 28 -

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Measured Load-Pull Smith Charts1, 2

Notes:

Test Conditions: VD = 32 V, IDQ = 25 mA, 100 uS Pulse Width, 20% Duty Cycle

See page 21 for load pull reference planes where the performance was measured.

10GHz, Load-pull

36.7

36.5

36.3

8.79

8.29

7.79

43.1

41.1

39.1

•••• Max Power is 36.8dBm

at Z = 15.039-6.807iΩ

Ω

Γ = 0.0501-0.2152i

•••• Max Gain is 8.9dB

at Z = 8.31-4.022iΩ

Ω

Γ = -0.2498-0.2156i

•••• Max PAE is 47.1%

at Z = 7.496-5.834iΩ

Ω

Γ = -0.2495-0.324i

Zo = 15Ω

Ω

3dB Compression Referenced to Peak Gain

Zs(1fo) = 41.96-41.29iΩ

Ω

Zs(2fo) = 13.13+18.14iΩ

Ω

Zs(3fo) = 23.9-11.76iΩ

Ω

Power

Gain

PAE

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