QPD1025LEVB2 datasheet(9/27 Pages) QORVO

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QPD1025L

1800 W, 65 V, 0.96

– 1.215GHz, GaN RF Input-Matched Transistor

Datasheet Rev. K, May 2020

│ Subject to changewithout notice

- 9 of 26-

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Measured Load-Pull Smith Charts at 65V 1, 2, 3

Notes:

Test Conditions: VD = 65 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C.

The performance shown below is for only half of the device out of the two independent amplification paths.

See

”Pin Configuration and Description” for load pull reference planes where the performance was measured.

Measured Load-Pull Smith Charts at 65V 1, 2, 3

Notes:

Test Conditions: VD = 65 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C.

The performance shown below is for only half of the device out of the two independent amplification paths.

See

”Pin Configuration and Description” for load pull reference planes where the performance was measured.

1.1GHz, Load-pull

58.9

58.7

58.5

58.3

58.1

57.9

57.7

57.5

20.1

19.6

19.1

18.6

18.1

17.6

63.9

65.9

67.9

69.9

71.9

73.9

75.9

• Max Power is 59dBm

at Z = 2.53+0.746i

 = -0.0655+0.1438i

• Max Gain is 20.4dB

at Z = 1.111+1.709i

 = -0.2444+0.5171i

• Max PAE is 76.9%

at Z = 2.221+1.322i

 = -0.08+0.2735i

Zo = 3

3dB Compression Referenced to Peak Gain

Zs(fo) = 0.94-2.29i

Zs(2fo) = 0.47-0.06i

Zs(3fo) = 0.52+0.8i

Zl(2fo) = 0.8+0.69i

Zl(3fo) = NaN

Power

Gain

PAE

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