QPD1025LEVB2 datasheet(7/27 Pages) QORVO

No. de pieza	QPD1025LEVB2

Descripción Electrónicos	1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor

PDF	27 Pages

Scroll/Zoom	100%

Fabricante Electrónico	QORVO [Qorvo, Inc]

Página de inicio	https://www.qorvo.com/

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7 / 27 page

QPD1025L

1800 W, 65 V, 0.96

– 1.215GHz, GaN RF Input-Matched Transistor

Datasheet Rev. K, May 2020

│ Subject to changewithout notice

- 7 of 26-

www.qorvo.com

Measured Load-Pull Smith Charts at 65V 1, 2, 3

Notes:

Test Conditions: VD = 65 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C.

The performance shown below is for only half of the device out of the two independent amplification paths.

See

”Pin Configuration and Description” for load pull reference planes where the performance was measured.

0.915GHz, Load-pull

59.8

59.6

59.2

58.8

58.4

57.6

19.5

18.5

78.3

77.3

74.3

71.3

69.3

68.3

65.3

• Max Power is 59.9dBm

at Z = 1.8-0.25i

 = -0.2466-0.0649i

• Max Gain is 20dB

at Z = 1.97+2.44i

 = 0.0272+0.4776i

• Max DEff is 78.4%

at Z = 2.46+2.07i

 = 0.0392+0.3643i

Zo = 3

3dB Compression Referenced to Peak Gain

Zs(1fo) = 0.72-1.74i

Zs(2fo) = 1.65-4.46i

Zs(3fo) = 2.73-0.85i

Zl(2fo) = 1.09+2.31i

Zl(3fo) = 9.04-3.29i

Power

Gain

DEFF

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