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QPD1025LEVB2 Datasheet(PDF) 6 Page - Qorvo, Inc |
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QPD1025LEVB2 Datasheet(HTML) 6 Page - Qorvo, Inc |
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6 / 27 page ![]() QPD1025L 1800 W, 65 V, 0.96 – 1.215GHz, GaN RF Input-Matched Transistor Datasheet Rev. K, May 2020 │ Subject to changewithout notice - 6 of 26- www.qorvo.com Thermal and Reliability Information – Pulsed 1 Parameter Conditions Values Units Thermal Resistance, IR1 (θJC) 85 °C Case backside Temperature Pdiss = 518 W, Pulse: 100 us PW, 10% DC 0.10 °C/W Peak IR Surface Temperature1 (Tch) 131 °C Notes: 1. Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates |
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