Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

Preview PDF HTML

UT8205AL-SO8-R Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

No. de pieza UT8205AL-SO8-R
Descripción Electrónicos  Dual N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Página de inicio  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UT8205AL-SO8-R Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  UT8205AL-SO8-R Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. UT8205AL-SO8-R Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. UT8205AL-SO8-R Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. UT8205AL-SO8-R Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
www.doingter.cn
—
2 —
Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
20
---
---
V
IDSS
Drain-Source Leakage Current
VDS=16V , VGS=0V ,TJ=25℃
---
---
1
uA
IGSS
Gate-Source Leakage Current
VGS=±10V, VDS=0V
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
0.5
1
1.5
V
RDS(ON)
Static Drain-Source On Resistance
VGS=4.5V,ID=6.5A
---
19
24
mΩ
VGS=2.5V,ID=5.4A
---
23
30
GFS
Forward Transconductance
VDS=5V, ID=3A
---
11
---
S
Dynamic Characteristics
4
Ciss
Input Capacitance
VDS=10V, VGS=0V, f=1MHz
---
700
---
pF
Coss
Output Capacitance
---
175
---
Crss
Reverse Transfer Capacitance
---
85
---
Switching Characteristics
td(on)
Turn-On Delay Time
2,3
VDS=10V, ID=1A,
RGEN=6Ω, VGS=4.5V
---
8
16
ns
tr
Rise Time
2,3
---
10
18
ns
td(off)
Turn-Off Delay Time
2,3
---
18
29
ns
tf
Fall Time
2,3
---
5
10
ns
Qg
Total Gate Charge
2,3
VGS=4.5V, VDS=10V,
ID=3A
---
7
10
nC
Qgs
Gate-Source
Charge
2,3
---
1.2
---
nC
Qgd
Gate-Drain “Miller” Charge
2,3
---
.9
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
2
VGS=0V,IS=1.3A,TJ=25℃
---
---
1.2
V
UT8205AL-SO8-R



Html Pages

1 2 3 4


Datasheet Descarga

Go To PDF Page


Enlace URL



¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Enlace a la hoja de datos    |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com