UT8205AL-SO8-R datasheet(1/4 Pages) DOINGTER

No. de pieza	UT8205AL-SO8-R

Descripción Electrónicos	Dual N-Channel MOSFET uses advanced trench technology

PDF	4 Pages

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Fabricante Electrónico	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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Description：

Features：

1) VDS=20V,ID=6.5A,RDS(ON)<24mΩ@VGS=4.5V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

20

V

VGS

Gate-Source Voltage

±10

V

ID

Drain Current – Continuous (TC=25℃ )

1

6.5

A

Drain Current – Continuous (TC=100℃ )

---

IDM

Drain Current – Pulsed

20

PD

Power Dissipation (TC=25℃ )

1

1.6

W

Power Dissipation – Derate above 25℃

---

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case

1

40

℃/W

RƟJA

Thermal Resistance,Junction to Ambient

1

78

G1

D2

D1

S2

G2

S1

This Dual N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

UT8205AL-SO8-R

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