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HFS640 Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

No. de pieza HFS640
Descripción Electrónicos  N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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Fabricante Electrónico  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Página de inicio  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

HFS640 Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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—
2 —
RƟJA
Thermal Resistance,Junction to Ambient
62.5
Electrical Characteristics：(TC=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
200
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=200V
---
---
1
μ
A
VDS=160V, TC=125℃
---
---
10
IGSS
Gate-Source Leakage Current
VGS=±30V, VDS=0A
---
---
±
100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
2
---
4
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=10A
---
---
1.8
Ω
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25
v, VGS=0V, f=1MHz
---
800
1050
pF
Coss
Output Capacitance
---
185
250
Crss
Reverse Transfer Capacitance
---
20
30
Switching Characteristics
td(on)
Turn-On Delay Time
VDD=100V,.ID=18A
RG=25Ω. (Note3,4)
---
16
40
ns
tr
Rise Time
---
133
275
ns
td(off)
Turn-Off Delay Time
---
38
85
ns
tf
Fall Time
---
62
135
ns
Qg
Total Gate Charge
VGS=10V, VDS=160V
ID=18A. (Note3,4)
---
20
26
nC
Qgs
Gate-Source Charge
---
5.6
---
nC
Qgd
Gate-Drain Charge
---
10
---
nC
Drain-Source Diode Characteristics
℃
/W
HFS640



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