HFS640 datasheet(3/5 Pages) DOINGTER

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VSD

Source-Drain Diode Forward Voltage

ID=9A

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1.5

Max. Diode Forward Current

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ISM

Max. Pulsed Forward Curent

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Trr

Reverse Recovery Time

IS=9A,VGS =0V

diF/dt=100A/μs (Note3)

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158

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qrr

Reverse Recovery Charge

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Notes:

Typical Characteristics： (TC=25℃ unless otherwise noted)

1, L=3.0mH, IAS=9A, VDD=50V, RG=25Ω, Starting TJ =25°C

2, Repetitive Rating : Pulse width limited by maximum junction temperature

3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%

4, Essentially Independent of Operating Temperature

0.0

0.4

0.8

1.2

1.6

2.0

2.4

-1

150℃

Notes :

※

1. V

GS = 0V

2. 250µ s Pulse Test

25℃

SD, Source-Drain voltage [V]

1020

30405060

0.0

0.2

0.4

0.6

0.8

GS = 20V

GS = 10V

Note : T

※

J = 25℃

D, Drain Current [A]

246

-1

150

-55

Notes :

※

1. V

DS = 40V

2. 250µ s Pulse Test

GS, Gate-Source Voltage [V]

-1

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

Notes :

※

1. 250µ s Pulse Test

2. T

C = 25℃

DS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

HFS640

HFS640 Datasheet(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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