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AM50DL128CH Datasheet(PDF) 53 Page - Advanced Micro Devices |
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AM50DL128CH Datasheet(HTML) 53 Page - Advanced Micro Devices |
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53 / 64 page ![]() October 6, 2003 Am50DL128CH 51 ADV ANCE I N FO RMAT I O N FLASH AC CHARACTERISTICS Alternate CE#f Controlled Erase and Program Operations Notes: 1. Not 100% tested. 2. See the “Flash Erase And Programming Performance” section for more information. 3. CE#f refers to active flash device being addressed (either CE#f1 or CE#f2). Parameter Speed JEDEC Std Description 56 70 85 Unit t AVAV t WC Write Cycle Time (Note 1) Min 55 70 85 ns t AVWL t AS Address Setup Time Min 0 ns t ELAX t AH Address Hold Time Min 30 40 45 ns t DVEH t DS Data Setup Time Min 30 40 45 ns t EHDX t DH Data Hold Time Min 0 ns t GHEL t GHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns t WLEL t WS WE# Setup Time Min 0 ns t EHWH t WH WE# Hold Time Min 0 ns t ELEH t CP CE#f Pulse Width Min 25 40 45 ns t EHEL t CPH CE#f Pulse Width High Min 25 30 ns t WHWH1 t WHWH1 Programming Operation (Note 2) Word Typ 7 µs t WHWH1 t WHWH1 Accelerated Programming Operation, Word or Byte (Note 2) Typ 4 µs t WHWH2 t WHWH2 Sector Erase Operation (Note 2) Typ 0.4 sec |
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