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AM50DL128CH Datasheet(PDF) 39 Page - Advanced Micro Devices

No. de pieza AM50DL128CH
Descripción Electrónicos  STACKED MULTI-CHIP PACKAGE (MCP) FLASH MEMORY AND SRAM
PDF  64 Pages
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Fabricante Electrónico  AMD [Advanced Micro Devices]
Página de inicio  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM50DL128CH Datasheet(HTML) 39 Page - Advanced Micro Devices

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October 6, 2003
Am50DL128CH
37
ADV ANCE
I N FO RMAT I O N
FLASH DC CHARACTERISTICS
CMOS Compatible
Notes:
1.
The I
CC current listed is typically less than 2 mA/MHz, with OE# at
V
IH.
2.
Maximum I
CC specifications are tested with VCC = VCCmax.
3.
I
CC active while Embedded Erase or Embedded Program is in
progress.
4.
Automatic sleep mode enables the low power mode when
addresses remain stable for t
ACC + 30 ns. Typical sleep mode
current is 200 nA.
5.
Not 100% tested.
6.
CE#f refers to chip enable input of active flash (device being
addressed).
7.
Typical and maximum current specifications shown are for each
flash device.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN = VSS to VCC,
V
CC = VCC max
±1.0
µA
I
LIT
RESET# Input Load Current
V
CC = VCC max; RESET# = 12.5 V
35
µA
I
LR
Reset Leakage Current
V
CC = VCC max; RESET# = 12.5 V
35
µA
I
LO
Output Leakage Current
V
OUT = VSS to VCC,
V
CC = VCC max
±1.0
µA
I
LIA
ACC Input Leakage Current
V
CC = VCC max, WP#/ACC
= V
ACC max
35
µA
I
CC1f
Flash VCC Active Read Current
(Notes 1, 2)
CE#f = V
IL, OE# = VIH,
Byte Mode
5 MHz
10
16
mA
1 MHz
2
4
CE#f = V
IL, OE# = VIH,
Word Mode
5 MHz
10
16
1 MHz
2
4
I
CC2f
Flash V
CC Active Write Current (Notes 2, 3)
CE#f = V
IL, OE# = VIH, WE# = VIL
15
30
mA
I
CC3f
Flash V
CC Standby Current (Notes 2, 7)
V
CCf = VCC max, CE#f, RESET#,
WP#/ACC = V
CCf ± 0.3 V
0.2
5
µA
I
CC4f
Flash VCC Reset Current (Notes 2, 7)
V
CCf = VCC max, RESET# = VSS ± 0.3 V,
WP#/ACC = V
CCf ± 0.3 V
0.2
5
µA
ICC5f
Flash V
CC Current Automatic Sleep Mode
(Notes 2, 4, 7)
V
CCf = VCC max, VIH = VCC ± 0.3 V;
V
IL = VSS ± 0.3 V
0.2
5
µA
ICC6f
Flash V
CC Active Read-While-Program
Current (Notes 1, 2)
CE#f = V
IL, OE# = VIH
Byte
21
45
mA
Word
21
45
I
CC7f
Flash V
CC Active Read-While-Erase
Current (Notes 1, 2)
CE#f = VIL, OE# = VIH
Byte
21
45
mA
Word
21
45
ICC8f
Flash V
CC Active
Program-While-Erase-Suspended Current
(Notes 2, 5)
CE#f = V
IL, OE#f = VIH
17
35
mA
V
IL
Input Low Voltage
–0.2
0.8
V
V
IH
Input High Voltage
2.4
V
CC + 0.2
V
VHH
Voltage for WP#/ACC Program
Acceleration and Sector
Protection/Unprotection
8.5
9.5
V
V
ID
Voltage for Sector Protection, Autoselect
and Temporary Sector Unprotect
11.5
12.5
V
V
OL
Output Low Voltage
I
OL = 4.0 mA, VCCf = VCCs = VCC min
0.45
V
VOH1
Output High Voltage
I
OH = –2.0 mA, VCCf = VCCs = VCC min
0.85 x
V
CC
V
V
OH2
I
OH = –100 µA, VCC = VCC min
V
CC–0.4
V
LKO
Flash Low V
CC Lock-Out Voltage (Note 5)
2.0
2.5
V



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