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STM32G47PBY3XXX Datasheet(PDF) 177 Page - STMicroelectronics

No. de pieza STM32G47PBY3XXX
Descripción Electrónicos  Arm® Cortex®-M4 32-bit MCUFPU, up to 512 KB Flash, 170 MHz / 213DMIPS, 128 KB SRAM, rich analog, math accelerator
PDF  229 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32G47PBY3XXX Datasheet(HTML) 177 Page - STMicroelectronics

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DS12712 Rev 3
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STM32G473xB STM32G473xC STM32G473xE
Electrical characteristics
194
Table 89. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings(1)(2)
1. CL = 30 pF.
2. Guaranteed by characterization results.
Symbol
Parameter
Min
Max
Unit
tw(NE)
FMC_NE low time
3 THCLK– 0.5
3THCLK+ 1
ns
tv(NOE_NE)
FMC_NEx low to FMC_NOE low
0
1
tw(NOE)
FMC_NOE low time
2 THCLK– 0.5
2 THCLK+ 1
th(NE_NOE)
FMC_NOE high to FMC_NE high hold time
THCLK
-
tv(A_NE)
FMC_NEx low to FMC_A valid
-
2
th(A_NOE)
Address hold time after FMC_NOE high
2 THCLK– 1
-
tsu(Data_NE)
Data to FMC_NEx high setup time
THCLK + 20
-
tsu(Data_NOE)
Data to FMC_NOEx high setup time
20
-
th(Data_NOE)
Data hold time after FMC_NOE high
0
-
th(Data_NE)
Data hold time after FMC_NEx high
0
-
tv(NADV_NE)
FMC_NEx low to FMC_NADV low
-
1.5
tw(NADV)
FMC_NADV low time
-
THCLK+ 8
Table 90. Asynchronous non-multiplexed SRAM/PSRAM/NOR read-NWAIT
timings(1)(2)
1. CL = 30 pF.
2. Guaranteed by characterization results.
Symbol
Parameter
Min
Max
Unit
tw(NE)
FMC_NE low time
-
8 THCLK + 1
ns
tw(NOE)
FMC_NWE low time
7 THCLK - 1 7 THCLK + 0.5
tw(NWAIT)
FMC_NWAIT low time
THCLK
-
tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high
5 THCLK + 17
-
th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 4 THCLK + 17
-



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