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STM32G47PBY3XXX Datasheet(PDF) 85 Page - STMicroelectronics

No. de pieza STM32G47PBY3XXX
Descripción Electrónicos  Arm® Cortex®-M4 32-bit MCUFPU, up to 512 KB Flash, 170 MHz / 213DMIPS, 128 KB SRAM, rich analog, math accelerator
PDF  229 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STM32G47PBY3XXX Datasheet(HTML) 85 Page - STMicroelectronics

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DS12712 Rev 3
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STM32G473xB STM32G473xC STM32G473xE
Electrical characteristics
194
5.3.4
Embedded voltage reference
The parameters given in Table 20 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 17: General operating
conditions.
Table 20. Embedded internal voltage reference
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference
voltage
–40 °C < TA < +130 °C 1.182 1.212 1.232
V
tS_vrefint (1)
1. The shortest sampling time is determined in the application by multiple iterations.
ADC sampling time
when reading the
internal reference
voltage
-4(2)
2. Guaranteed by design.
--
µs
tstart_vrefint
Start time of reference
voltage buffer when
ADC is enable
--
8
12(2)
µs
IDD(VREFINTBUF)
VREFINT buffer
consumption from VDD
when converted by
ADC
--
12.5
20(2)
µA
∆VREFINT
Internal reference
voltage spread over
the temperature range
VDD = 3 V
-
5
7.5(2)
mV
TCoeff
Average temperature
coefficient
–40°C < TA < +130°C
-
30
50(2)
ppm/°C
ACoeff
Long term stability
1000 hours, T = 25°C
-
300
1000(2)
ppm
VDDCoeff
Average voltage
coefficient
3.0 V < VDD < 3.6 V
-
250
1200(2) ppm/V
VREFINT_DIV1
1/4 reference voltage
-
24
25
26
%
VREFINT
VREFINT_DIV2
1/2 reference voltage
49
50
51
VREFINT_DIV3
3/4 reference voltage
74
75
76



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