STM32G47PBY3XXX datasheet(104/229 Pages) STMICROELECTRONICS

No. de pieza	STM32G47PBY3XXX

Descripción Electrónicos	Arm® Cortex®-M4 32-bit MCUFPU, up to 512 KB Flash, 170 MHz / 213DMIPS, 128 KB SRAM, rich analog, math accelerator

PDF	229 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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IDD

(Shutdown with

RTC)

Supply current

in Shutdown

mode (backup

registers

retained) RTC

enabled

RTC

clocked by

LSE

bypassed

at 32768

1.8 V

330

445

1150

2700

6800

2.4 V

460

605

1450

3350

8150

3 V

745

1000

2200

4550

10500

3.6 V

2100

2850

4900

8150

15500

RTC

clocked by

LSE

quartz(2) in

low drive

mode

1.8 V

285

450

1050

2500

2.4 V

410

585

1300

3050

3 V

565

770

1750

3750

3.6 V

780

1200

2400

4850

IDD(wakeup

from

Shutdown)

Supply current

during wakeup

from Shutdown

mode

Wakeup

clock is

HSI16 =

16 MHz(3)

3 V

1.6

---

1. Guaranteed by characterization results, unless otherwise specified.

2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.

3. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 36: Low-power mode wakeup timings.

Table 33. Current consumption in Shutdown mode (continued)

Symbol

Parameter

Conditions

TYP

MAX(1)

Unit

VDD

25°C

55°C

85°C

105°C

125°C

25°C

55°C

85°C

105°C

125°C

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