7 Specifications

7.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

6

V

Input voltage

V

PD voltage

6

V

Differential input voltage(4)

±5

V

Continuous input current(2)

±10

mA

Continuous output current(3)

±20

mA

Continuous power dissipation

See Thermal Information

Maximum junction temperature

150

°C

Operating free-air temperature

–40

125

°C

Storage temperature

–65

150

°C

(1)

Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not supported.

(2)

Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5 V beyond the supply rails

should be current limited to 10 mA or less.

(3)

Short-circuit to ground, one amplifier per package.

(4)

Long term drift of offset voltage (> 1mV) if a differential input in excess of ≈ 2V is applied continuously between the IN+ and IN- pins at

elevated temperatures.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic

discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged-device model (CDM), per JEDEC specification JESD22-

C101(2)

±1000

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

2.2

5.5

V

±1.1

±2.75

Ambient operating temperature

–40

25

125

°C

7.4 Thermal Information

THERMAL METRIC(1)

OPAx607

UNIT

D (SOIC)

DBV (SOT23)

DCK (SC70)

8 PINS

5 PINS

6 PINS

Junction-to-ambient thermal resistance

131.1

196.5

219.7

°C/W

Junction-to-case (top) thermal resistance

73.2

118.7

182.6

°C/W

Junction-to-board thermal resistance

74.5

64.5

105.7

°C/W

Junction-to-top characterization parameter

24.5

41.1

87

°C/W

Junction-to-board characterization parameter

73.3

64.2

105.4

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

OPA607, OPA2607

SBOS981F – OCTOBER 2019 – REVISED SEPTEMBER 2020

www.ti.com

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