SSM3K56ACT datasheet(1/8 Pages) TOSHIBA

No. de pieza	SSM3K56ACT

Descripción Electrónicos	MOSFETs Silicon N-Channel MOS

PDF	8 Pages

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Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

Página de inicio	http://www.semicon.toshiba.co.jp/eng

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SSM3K56ACT

1

MOSFETs Silicon N-Channel MOS

SSM3K56ACT

Start of commercial production

2015-11

1.

1. Applications

Applications

•

High-Speed Switching

2.

2. Features

Features

(1)

1.5-V gate drive voltage.

(2)

Low drain-source on-resistance

: RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V)

RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V)

RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V)

RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V)

3.

3. Packaging and Pin Configuration

Packaging and Pin Configuration

CST3

1.Gate

2.Source

3.Drain

2015-11-16

Rev.1.0

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