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SSM3K56ACT Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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SSM3K56ACT Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 8 page  SSM3K56ACT 4 5.5. 5.5. 5.5. 5.5. Source-Drain Characteristics (Unless otherwise specified, T Source-Drain Characteristics (Unless otherwise specified, T Source-Drain Characteristics (Unless otherwise specified, T Source-Drain Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Diode forward voltage (Note 1) Symbol VDSF Test Condition ID = -1.4 A, VGS = 0 V Min Typ. -0.82 Max -1.2 Unit V Note 1: Pulse measurement. 6. 6. 6. 6. Marking Marking Marking Marking Fig. Fig. Fig. Fig. 6.1 6.1 6.1 6.1 Marking Marking Marking Marking Fig. Fig. Fig. Fig. 6.2 6.2 6.2 6.2 Pin Condition(top view) Pin Condition(top view) Pin Condition(top view) Pin Condition(top view) 2015-11-16 Rev.1.0 ©2015 Toshiba Corporation |
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