SSM3K56ACT datasheet(3/8 Pages) TOSHIBA

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SSM3K56ACT

5. Electrical Characteristics

Electrical Characteristics

5.1.

5.1. Static Characteristics (Unless otherwise specified, T

Static Characteristics (Unless otherwise specified, T

Static Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25



))))

Characteristics

Gate leakage current

Drain cut-off current

Drain-source breakdown voltage

Gate threshold voltage

Drain-source on-resistance

Forward transfer admittance

(Note 1)

(Note 2)

(Note 3)

Symbol

IGSS

IDSS

V(BR)DSS

V(BR)DSX

Vth

RDS(ON)

|Yfs|

Test Condition

VGS = ±6 V, VDS = 0 V

VDS = 10 V, VGS = 0 V

ID = 1 mA, VGS = 0 V

ID = 1 mA, VGS = -5 V

VDS = 3 V, ID = 1 mA

ID = 800 mA, VGS = 4.5 V

ID = 600 mA, VGS = 2.5 V

ID = 200 mA, VGS = 1.8 V

ID = 50 mA, VGS = 1.5 V

VDS = 3 V, ID = 200 mA

Min



0.4



Typ.



186

230

290

360

1.4

Max

±1



1.0

235

300

480

840



Unit

µA

mΩ

Note 1: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-

source breakdown voltage is lowered in this mode.

Note 2: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for

this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be

lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).

Take this into consideration when using the device.

Note 3: Pulse measurement.

5.2.

5.2. Dynamic Characteristics (Unless otherwise specified, T

Dynamic Characteristics (Unless otherwise specified, T

Dynamic Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25



))))

Characteristics

Input capacitance

Reverse transfer capacitance

Output capacitance

Switching time (turn-on time)

Switching time (turn-off time)

Symbol

Ciss

Crss

Coss

ton

toff

Test Condition

VDS = 10 V, VGS = 0 V,

f = 1 MHz

VDD = 10 V, ID = 200 mA

VGS = 0 to 2.5 V, RG = 50 Ω,

Duty ≤ 1%, Input: tr, tf < 5 ns

Common source, See Chapter 5.3

Min



Typ.

5.5

8.5

Max



Unit

5.3.

5.3. Switching Time Test Circuit

Switching Time Test Circuit

Fig.

Fig. 5.3.1

5.3.1

5.3.1 Test Circuit of Switching Time

Test Circuit of Switching Time

Fig.

Fig. 5.3.2

5.3.2

5.3.2 Input Waveform/Output Waveform

Input Waveform/Output Waveform

5.4.

5.4. Gate Charge Characteristics (Unless otherwise specified, T

Gate Charge Characteristics (Unless otherwise specified, T

Gate Charge Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25



))))

Characteristics

Total gate charge (gate-source plus gate-drain)

Gate-source charge 1

Gate-drain charge

Symbol

Qgs1

Qgd

Test Condition

VDD = 10 V, VGS = 4.5 V,

ID = 800 mA

Min



Typ.

1.0

0.12

0.4

Max



Unit

2015-11-16

Rev.1.0

SSM3K56ACT Datasheet(PDF) 3 Page - Toshiba Semiconductor

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